Transient and stationary field emission currents from semiconductors computed by a simple semi-classical method

Document Type

Article

Publication Date

1-1-1998

Abstract

The transient emission current densities from flat band semiconductors and the stationary emission from graded electron affinity devices are computed by a combined semi-classical transport+ transmission coefficient method. A rapid sequence of sharp current overshoots can be obtained in the first case for a wide range of built-up speeds of the external field. Their amplitudes and frequencies are field dependent and can be diminished by previous "heating" of the electronic system. In the second case, low field saturation and temperature assisted emission enhancement were found as expected. Several practical conclusions are drawn. © 1998 American Vacuum Society.

Identifier

0032028469 (Scopus)

Publication Title

Journal of Vacuum Science and Technology B Microelectronics and Nanometer Structures

External Full Text Location

https://doi.org/10.1116/1.589925

ISSN

10711023

First Page

888

Last Page

894

Issue

2

Volume

16

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