Low damage, highly anisotropic dry etching of SiC
Document Type
Conference Proceeding
Publication Date
1-1-1998
Abstract
A parametric study of the etching characteristics of 6H p+ and n+ SiC and thin film SiC0.5N0.5 in Inductively Coupled Plasma NF3/O2 and NF3/Ar discharges has been performed. The etch rates in both chemistries increase monotonically with NF3 percentage and rf chuck power. The etch rates go through a maximum with increasing ICP source power, which is explained by a trade-off between the increasing ion flux and the decreasing ion energy. The anisotropy of the etched features is also a function of ion flux, ion energy and atomic fluorine neutral concentration. Indium-tin-oxide (ITO) masks display relatively good etch selectivity over SiC (maximum of ∼70:1), while photoresist etches more rapidly than SiC. The surface roughness of SiC is essentially independent of plasma composition for NF3/O2 discharges, while extensive surface degradation occurs for SiCN under high NF3:O2 conditions.
Identifier
85054567515 (Scopus)
ISBN
[0780345401, 9780780345409]
Publication Title
1998 4th International High Temperature Electronics Conference HITEC 1998
External Full Text Location
https://doi.org/10.1109/HITEC.1998.676752
First Page
10
Last Page
14
Fund Ref
Air Force Office of Scientific Research
Recommended Citation
Wang, J. J.; Hong, J.; Lambers, E. S.; Pearton, S. J.; Ostling, M.; Zetterling, C. M.; Grow, J. M.; Ren, F.; and Shul, R. J., "Low damage, highly anisotropic dry etching of SiC" (1998). Faculty Publications. 16578.
https://digitalcommons.njit.edu/fac_pubs/16578
