ICP etching of SiC
Document Type
Article
Publication Date
1-1-1998
Abstract
A number of different plasma chemistries, including NF3/O2, SF6/O2, SF6/Ar, ICl, IBr, Cl2/ Ar, BCl3/Ar and CH4/H2/Ar, have been investigated for dry etching of 6H and 3C-SiC in an inductively coupled plasma tool. Rates above 2000 Å cm-1 are found with fluorine-based chemistries at high ion currents. Surprisingly, Cl2-based etching does not provide high rates, even though the potential etch products (SiCl4 and CCl4) are volatile. Photoresist masks have poor selectivity over SiC in F2-based plasmas under normal conditions, and ITO or Ni is preferred. © 1998 Published by Elsevier Science Ltd. All rights reserved.
Identifier
0032291329 (Scopus)
Publication Title
Solid State Electronics
External Full Text Location
https://doi.org/10.1016/S0038-1101(98)00226-3
ISSN
00381101
First Page
2283
Last Page
2288
Issue
12
Volume
42
Grant
DE-AC04-94AL85000
Fund Ref
U.S. Department of Energy
Recommended Citation
Wang, J. J.; Lambers, E. S.; Pearton, S. J.; Ostling, M.; Zetterling, C. M.; Grow, J. M.; Ren, F.; and Shul, R. J., "ICP etching of SiC" (1998). Faculty Publications. 16566.
https://digitalcommons.njit.edu/fac_pubs/16566
