Pulsed-laser deposition of Si nanoclusters

Document Type

Article

Publication Date

1-1-1998

Abstract

Growth properties of thin films of Si nanoclusters that were deposited on Si wafers by use of pulsed-laser ablation are discussed. The films were characterized by Atomic Force Microscopy (AFM) and X-ray Diffraction (XRD) and FTIR spectroscopy. Large nonlinear optical absorption was measured using a Free-Electron Laser at wavelengths near the infrared absorption band centered at 9.8 μm. © 1998 Elsevier Science B.V.

Identifier

0032070247 (Scopus)

Publication Title

Applied Surface Science

External Full Text Location

https://doi.org/10.1016/S0169-4332(97)00659-4

ISSN

01694332

First Page

378

Last Page

382

Volume

127-129

Grant

N00014-94-1-1023

Fund Ref

Vanderbilt University

This document is currently not available here.

Share

COinS