Plasma etching of dielectric films using the non-global-warming gas CF3I

Document Type

Article

Publication Date

1-1-1998

Abstract

In this study, trifluoroiodomethane (CF3I), a non-global-warming gas, has been investigated as a substitute for typical PFCs currently used in wafer patterning and CVD chamber cleaning processes. Dielectric films consisting of plasma enhanced chemically vapor deposited silicon dioxide and silicon nitride were comparatively etched in CF3I and C2F6/O2 plasma environments. The etch rate of these films was ascertained as a function of applied rf power, etchant gas flow rate, reaction chamber pressure and CF3I:O2 ratio. © 1998 Elsevier Science B.V.

Identifier

0032025436 (Scopus)

Publication Title

Materials Letters

External Full Text Location

https://doi.org/10.1016/S0167-577X(97)00209-7

ISSN

0167577X

First Page

415

Last Page

419

Issue

3-6

Volume

34

This document is currently not available here.

Share

COinS