Temperature-dependent emissivity of silicon-related materials and structures

Document Type

Article

Publication Date

1-1-1998

Abstract

The results of an ongoing collaborative project between the New Jersey Institute of Technology (NJIT) and SEMATECH on the temperature-dependent emissivity of silicon-related materials and structures are presented in this study. These results have been acquired using a spectral emissometer. This emissometer consists of a Fourier Transform Infra-Red (FTIR) spectrometer designed specifically to facilitate simultaneous measurements of surface spectral emittance and temperature by using optical techniques over the near- and mid-IR spectral range and temperatures ranging from 300 K to 2000 K. This noncontact, real-time technique has been used to measure radiative properties as a function of temperature and wavelength for a wide range of silicon-related materials and structures. The first results of the temperature and wavelength dependent emissivity and hence refractive index of silicon nitride, in the literature, is presented in this study.

Identifier

0032002225 (Scopus)

Publication Title

IEEE Transactions on Semiconductor Manufacturing

External Full Text Location

https://doi.org/10.1109/66.661282

ISSN

08946507

First Page

30

Last Page

39

Issue

1

Volume

11

Grant

360220900

Fund Ref

Defense Advanced Research Projects Agency

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