Wafer emissivity independent temperature measurements

Document Type

Article

Publication Date

1-1-1998

Abstract

A study on the techniques to yield wafer emissivity independent temperature measurements in rapid thermal processing has been presented. This study focuses on the Steag-AST Electronik approach to enhance wafer emissivity by using the Hotliner. The Hotliner comprises of a heavily doped p-Si substrate sandwiched with Si3N4/SiO2 from both sides. Experimental measurements on the optical properties of the Hotliner using a spectral emissometer operating in the wavelength range of 1-20 μm are presented here. Results of the simulation of the experimental data using the MIT/SEMATECH Multi-Rad model are discussed.

Identifier

0032290679 (Scopus)

Publication Title

Journal of Electronic Materials

External Full Text Location

https://doi.org/10.1007/s11664-998-0091-6

ISSN

03615235

First Page

1323

Last Page

1328

Issue

12

Volume

27

Fund Ref

Defense Advanced Research Projects Agency

This document is currently not available here.

Share

COinS