Issues in emissivity of silicon

Authors

S. Abedrabbo, New Jersey Institute of Technology
J. C. Hensel, New Jersey Institute of Technology
O. H. Gokce, New Jersey Institute of Technology
F. M. Tong, New Jersey Institute of Technology
B. Sopori, New Jersey Institute of Technology
A. T. Fiory, New Jersey Institute of Technology
N. M. Ravindra, New Jersey Institute of Technology

Document Type

Conference Proceeding

Publication Date

1-1-1998

Abstract

The first qualitative results of the effects of backside surface roughness on the radiative properties of silicon as a function of temperature in the wavelength range of 1-20 μm are presented in this study. These measurements have been made utilizing a spectral emissometer operating at near- and mid-IR spectral range. Surface roughness of the silicon wafer has been observed to lead to increased emissivities.

Identifier

0031621068 (Scopus)

Publication Title

Materials Research Society Symposium Proceedings

External Full Text Location

https://doi.org/10.1557/proc-525-95

ISSN

02729172

First Page

95

Last Page

102

Volume

525

Recommended Citation

Abedrabbo, S.; Hensel, J. C.; Gokce, O. H.; Tong, F. M.; Sopori, B.; Fiory, A. T.; and Ravindra, N. M., "Issues in emissivity of silicon" (1998). Faculty Publications. 16365.
https://digitalcommons.njit.edu/fac_pubs/16365