High rate etching of SiC and SiCN in NF3 inductively coupled plasmas

Document Type

Article

Publication Date

5-6-1998

Abstract

Etch rates of ∼3,500 Å/min for 6H-SiC and ∼7,500 Å/min for SiC0.5N0.5 were obtained in inductively coupled plasmas with NF3-based chemistries. Similar etch rate trends were achieved with both NF3/O2 and NF3/Ar mixtures. The rates were strong functions of plasma composition, ion energy and ion fluxes, and were independent of conductivity type for SiC. Surface root-mean-square (RMS) roughness were 1-2 nm for etched SiC over a wide range of conditions indicating equi-rate removal of the SiFx and CFx etch products, but SiCN surfaces became extremely rough (RMS roughness > 20 nm) for F2-rich plasma conditions. The etched surfaces of SiC were chemically clean and stoichiometric, with small (<0.2 at%) quantities of N2- or F2- containing residues detected. © 1998 Elsevier Science Ltd. All rights reserved.

Identifier

0032065101 (Scopus)

Publication Title

Solid State Electronics

External Full Text Location

https://doi.org/10.1016/S0038-1101(97)00297-9

ISSN

00381101

First Page

743

Last Page

747

Issue

5

Volume

42

Fund Ref

Air Force Office of Scientific Research

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