Investigation of porous silicon morphology for electron emission applications

Document Type

Conference Proceeding

Publication Date

6-1-1998

Abstract

The morphology and composition of porous silicon (PS) of high porosity (80%), realized on flat and on emitter covered surfaces, were investigated in order to establish the optimal preparation conditions for electron emission applications. Scanning force microscopy (SFM) images reveal a variable number of hillocks of different sizes, depending on silicon type, randomly distributed on the Si surface. A great number of cracks are present on the high porosity PS layers thicker than 2-3 μm realized on flat Si surfaces, but the average hillocks size is more uniform compared to the case of PS on emitters. A higher density of hillocks was observed on PS/p-Si comparatively to the case of PS/n-Si. A good correlation between the PS morphology and field emission characteristics was obtained. A maximum value of 2.5 μA of the emission current was measured on PS layers prepared on p-type Si flat surface for applied voltage Va = 100 V. Secondary ion mass spectrometry (SIMS) analyses indicate a high degree of PS oxidation when kept in atmospheric conditions after preparation. The Fowler-Nordheim behavior of the emission characteristics occurs only after native oxide breakdown.

Identifier

0032104065 (Scopus)

Publication Title

Ultramicroscopy

External Full Text Location

https://doi.org/10.1016/S0304-3991(97)00162-9

ISSN

03043991

First Page

237

Last Page

245

Issue

1-4

Volume

73

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