The amorphization kinetics of GaAs irradiated with Si ions

Document Type

Article

Publication Date

6-15-1998

Abstract

The critical relationship between ion flux and substrate temperature which defines the threshold conditions for the formation of amorphous layers in GaAs at constant ion fluence is measured for the first time. At elevated temperatures, amorphous layers are formed in GaAs by a collapselike process when a critical free energy value is exceeded. The threshold conditions for amorphization are shown to be thermally activated, with an activation energy of 0.9±0.1 eV. However, specific defects and/or processes giving rise to this value are not yet known. © 1998 American Institute of Physics.

Identifier

0008433003 (Scopus)

Publication Title

Journal of Applied Physics

External Full Text Location

https://doi.org/10.1063/1.367516

ISSN

00218979

First Page

7533

Last Page

7536

Issue

12

Volume

83

Grant

1068237

Fund Ref

National Science Foundation

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