Plasma damage immunity of thin gate oxide grown on very lightly N+ implanted silicon

Authors

K. P. Cheung, Nokia Bell Labs
D. Misra, Newark College of Engineering
J. I. Colonell, Nokia Bell Labs
C. T. Liu, Nokia Bell Labs
Y. Ma, Nokia Bell Labs
C. P. Chang, Nokia Bell Labs
W. Y.C. Lai, Nokia Bell Labs
R. Liu, Nokia Bell Labs
C. S. Pai, Nokia Bell Labs

Document Type

Article

Publication Date

7-1-1998

Abstract

Plasma damage immunity of gate oxide grown on very low dose (2 × 10¹³/cm²) N⁺ implanted silicon is found to be improved comparing to regular gate oxide of similar thickness. Both hole trapping and electron trapping are suppressed by the incorporation of nitrogen into the gate oxide. Hole trapping behavior was determined from the relationship between initial electron trapping slope (IETS) and threshold voltage shifts due to current stress. This method is believed to be far more reliable than the typical method of initial gate voltage lowering during current stress.

Identifier

0032121584 (Scopus)

Publication Title

IEEE Electron Device Letters

External Full Text Location

https://doi.org/10.1109/55.701426

ISSN

07413106

First Page

231

Last Page

233

Issue

7

Volume

19

Recommended Citation

Cheung, K. P.; Misra, D.; Colonell, J. I.; Liu, C. T.; Ma, Y.; Chang, C. P.; Lai, W. Y.C.; Liu, R.; and Pai, C. S., "Plasma damage immunity of thin gate oxide grown on very lightly N+ implanted silicon" (1998). Faculty Publications. 16329.
https://digitalcommons.njit.edu/fac_pubs/16329