Impurity gettering to secondary defects created by MeV ion implantation in silicon

Document Type

Article

Publication Date

9-1-1998

Abstract

Impurities in MeV-implanted and annealed silicon may be trapped at interstitial defects near the projected ion range, Rp, and also at vacancy-related defects at approximately Rp/2. We have investigated the temperature dependence of impurity trapping at these secondary defects, which were preformed by annealing at 900 °C, The binding energies of Fe, Ni, and Cu are greater at the vacancy-related defects than at extrinsic dislocation loops. During subsequent processing at temperatures up to 900 °C, the amount of these impurities trapped at Rp/2 increases with decreasing temperature while the amount trapped at Rp decreases, with most of the trapped metals located at Rp/2 in samples processed at temperatures ≲ 700 °C. However, intrinsic oxygen is trapped at both types of defects; this appears to have little effect on the trapping of metallic impurities at extrinsic dislocations, but may inhibit or completely suppress the trapping at vacancy-related defects. © 1998 American Institute of Physics.:.

Identifier

0001570379 (Scopus)

Publication Title

Journal of Applied Physics

External Full Text Location

https://doi.org/10.1063/1.368438

ISSN

00218979

First Page

2459

Last Page

2465

Issue

5

Volume

84

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