A pulsed high-current electron-ion-cluster source for the deposition of films and coatings

Document Type

Article

Publication Date

10-10-1998

Abstract

A new compact ion cluster source (CICS) for generating pulsed cluster beams is described and applied to the production of films of C, Cu and Al for semiconductor applications. It is then used in combination with a second source, an intense electron-ion diode source with explosive emission which was presented previously. This latter is used for a surface pre-treatment step, before depositing a film with the CICS, to remove surface native oxides and impurities and modify the surface topography and roughness with the intention of enhancing adhesion. The combined treatment is used to deposit well-adhering coatings of copper on stainless steel; these can be of the order of 100-μm thick. Finally, the fractal dimension of surfaces after electron or ion bombardment and coating is quantified.

Identifier

0039181890 (Scopus)

Publication Title

Surface and Coatings Technology

External Full Text Location

https://doi.org/10.1016/S0257-8972(98)00653-7

ISSN

02578972

First Page

265

Last Page

270

Volume

108-109

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