Direct tunneling diode structure with a multilayer charge injection barrier

Document Type

Article

Publication Date

12-1-1998

Abstract

We report the fabrication and testing of a silicon-based tunnel diode structure that incorporates a multilayer tunneling dielectric. The barrier consists of two thermally grown silicon oxide layers of direct tunneling thickness, ∼3.5 nm each, separated by an ultrathin nanocrystalline silicon layer approximately 5 nm thick. The diode displays current-voltage characteristics that are similar to those of a Fowler-Nordheim device, with a strong current turn-on beyond threshold positive and negative biases, and a "window" region between these two levels where charge transport across the barrier is negligible. In contrast to Fowler-Nordheim devices, the barrier does not appear to degrade significantly when biased in either of its conduction regimes. This property is attributed to the intrinsic degradation resistance of direct tunnel oxides. Additionally, capacitance-voltage characteristics show that the structure is of high quality. Because of its current-voltage and endurance capabilities, this structure shows promise for nonvolatile memory and other applications which require improved endurance and charge retention. © 1998 American Institute of Physics.

Identifier

0001519640 (Scopus)

Publication Title

Applied Physics Letters

External Full Text Location

https://doi.org/10.1063/1.122872

ISSN

00036951

First Page

3712

Last Page

3714

Issue

25

Volume

73

This document is currently not available here.

Share

COinS