Artificial dielectrics: Nonlinear properties of Si nanoclusters formed by ion implantation in SiO2 glassy matrix

Document Type

Article

Publication Date

12-15-1998

Abstract

The nonlinear optical properties of Si nanoclusters formed by ion implantation into an SiO2 glassy matrix and followed by annealing have been studied at λ = 532 nm and λ = 355 nm by use of Z-scan and pump-probe techniques. These have been compared to the nonlinear properties of laser-ablated Si films. At relatively large intensities (>1 MW/cm2), the absolute nonlinear values for these isolated nanoclusters were comparable to those obtained for laser-ablated samples although opposite in sign. Laser-ablated samples showed a much larger effect at relatively low intensities (<1 MW/cm2), while the ion-implanted films showed almost none. Lifetime constants were in the range of 3-5 ns for all samples. © 1998 American Institute of Physics.

Identifier

0005934706 (Scopus)

Publication Title

Journal of Applied Physics

External Full Text Location

https://doi.org/10.1063/1.369019

ISSN

00218979

First Page

6502

Last Page

6506

Issue

12

Volume

84

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