Characterization of laser ablated silicon thin films
Document Type
Article
Publication Date
1-1-1999
Abstract
Using laser ablation, we deposited silicon layers consisting of clusters and crystalline domains onto glass, quartz, aluminum, titanium, copper, single-crystal silicon and single-crystal potassium bromide substrates. The microstructure and the morphology of the films were characterized by use of optical microscopy, laser scanning microscopy, atomic force microscopy, transmission electron microscopy, micro-Raman spectroscopy, X-ray photoelectron spectroscopy and X-ray diffraction. The results indicated that the deposited material was composed of microcrystalline droplets, typically 3.5 μm in diameter, separated by amorphous-like regions. The droplets were composed of crystalline material at their centers and an outer halo of nanometer-size particles. © 1999 Elsevier Science S.A. All rights reserved.
Identifier
0033534965 (Scopus)
Publication Title
Thin Solid Films
External Full Text Location
https://doi.org/10.1016/S0040-6090(98)01158-4
ISSN
00406090
First Page
102
Last Page
108
Issue
1-2
Volume
339
Recommended Citation
Vijayalakshmi, S.; Iqbal, Z.; George, M. A.; Federici, J.; and Grebel, H., "Characterization of laser ablated silicon thin films" (1999). Faculty Publications. 16162.
https://digitalcommons.njit.edu/fac_pubs/16162
