Evidence from spectral emissometry for conduction intraband transitions in the intrinsic regime for silicon

Document Type

Article

Publication Date

1-1-1999

Abstract

From emissometry measurements in lightly doped Si at elevated temperatures, we have observed an anomalous absorption band in the wavelength range of 1-5 μm. The wavelength at which the band peaks, λ≈2.3 μm, shows a negligible dependence on temperature while the peak intensity increases with temperature presumably as a result of the increasing intrinsic carrier concentration. Spitzer and Fan reported a similar absorption band in direct absorption measurements at room temperature for n-type Si with extrinsic electron concentrations of 1014 to 1019 cm-3. No such structure was found in extrinsic p-type Si. Spitzer and Fan were unable to identify the mechanism for this anomalous absorption. In both the experiments, this absorption of free electrons is due to intraband transitions in the conduction band from the Δ1 conduction band edge across an energy gap of E to approximately 0.5 eV to a higher lying Δ2′ conduction band.

Identifier

0033281287 (Scopus)

Publication Title

Journal of Electronic Materials

External Full Text Location

https://doi.org/10.1007/s11664-999-0127-6

ISSN

03615235

First Page

1390

Last Page

1393

Issue

12

Volume

28

Fund Ref

Defense Advanced Research Projects Agency

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