Calculation of emissivity of Si wafers

Document Type

Article

Publication Date

1-1-1999

Abstract

A computer-software, EMISSIVITY, has been developed to calculate the emissivity (ε) of silicon wafers of any surface morphology, for a given temperature and dopant concentration. The software uses a combination of ray- and wave-optics approaches to include the interference and the polarization effects necessary for multilayer surface coatings and multi-reflections within thin wafers. The refractive index and the absorption coefficient are calculated as a function of temperature and dopant concentration using an empirical model for an indirect bandgap semiconductor. The results of this model are compared with conventional emissivity calculations and experimental data.

Identifier

0033281334 (Scopus)

Publication Title

Journal of Electronic Materials

External Full Text Location

https://doi.org/10.1007/s11664-999-0126-7

ISSN

03615235

First Page

1385

Last Page

1389

Issue

12

Volume

28

Grant

-AC36-98-G010337

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