The role of oxygen on the stability of gettering of metals to cavities in silicon
Document Type
Article
Publication Date
10-18-1999
Abstract
The effect of oxygen implanted into epitaxial Si layers on the ability to getter Au to nanocavities, previously formed by H implantation and annealing, has been studied by Rutherford backscattering, transmission electron microscopy, and secondary ion mass spectrometry. We demonstrate that oxygen is gettered to cavities during extended annealing at 950 °C. Furthermore, the arrival of oxygen at cavities is not only shown to inhibit subsequent attempts to getter Au to cavities, but also to eject chemisorbed Au from the cavity walls. Similar behavior is observed in Czochralski Si, where the source of oxygen is within the Si itself. © 1999 American Institute of Physics.
Identifier
0000983912 (Scopus)
Publication Title
Applied Physics Letters
External Full Text Location
https://doi.org/10.1063/1.125035
ISSN
00036951
First Page
2424
Last Page
2426
Issue
16
Volume
75
Recommended Citation
Williams, J. S.; Conway, M. J.; Wong-Leung, J.; Deenapanray, P. N.K.; Petravic, M.; Brown, R. A.; Eaglesham, D. J.; and Jacobson, D. C., "The role of oxygen on the stability of gettering of metals to cavities in silicon" (1999). Faculty Publications. 15924.
https://digitalcommons.njit.edu/fac_pubs/15924
