Stable hexagonal-wurtzite silicon phase by laser ablation

Document Type

Article

Publication Date

11-1-1999

Abstract

A stable phase of relatively large hexagonal-wurtzite silicon crystals (up to 20 μm) was directly deposited at low pressure using ultraviolet laser ablation. The films were grown on a variety of substrates at room temperature from a single crystal, cubic silicon target. Crystallites of the hexagonal-wurtzite phase of silicon were clearly identified using selected area electron diffraction. Further support for this identification was provided by confocal scanning micro-Raman spectroscopy. The deposition of hexagonal silicon films may lead to novel two-dimensional optoelectronic devices, and pave the way to studies of the electronic properties of this lower symmetry, uncommon silicon phase. © 1999 American Institute of Physics.

Identifier

0001151299 (Scopus)

Publication Title

Applied Physics Letters

External Full Text Location

https://doi.org/10.1063/1.125140

ISSN

00036951

First Page

2758

Last Page

2760

Issue

18

Volume

75

This document is currently not available here.

Share

COinS