Gate oxides grown on deuterium-implanted silicon substrate

Document Type

Article

Publication Date

12-1-1999

Abstract

Thin oxides (4 nm) grown on deuterium-implanted silicon substrates were investigated for the first time. It was observed that deuterium implantation at a light dose of 1×1014/cm2 at 25 keV significantly reduced the leakage current through the oxide. A reduction in electron trap density has also been observed for this oxide. An increase in leakage current, observed for both higher and lower energy deuterium implants, was possibly because of enhanced substrate damage and out-diffusion of deuterium, respectively. Deuterium-implanted oxide, subjected to N2O annealing, showed further improvement in electrical characteristics.

Identifier

0033284341 (Scopus)

Publication Title

Electrochemical and Solid State Letters

External Full Text Location

https://doi.org/10.1149/1.1390932

ISSN

10990062

First Page

637

Last Page

639

Issue

12

Volume

2

This document is currently not available here.

Share

COinS