Emissivity measurements and modeling of silicon-related materials: An overview

Document Type

Article

Publication Date

1-1-2001

Abstract

An overview of the emissivity measurements and modeling of silicon-related materials is presented. The experimental component of this investigation is based on results obtained utilizing spectral emissometry. An analysis of the comparison of the measured data with other similar approaches is made. In particular, the celebrated work of Sato is revisited to understand the implications of his study. Simulations of the temperature and wavelength dependent emissivity of silicon based on the semiempirical MULTIRAD model are presented. The influence of doping concentration, surface roughness, and coatings on the emissivity of silicon, as a function of temperature, is discussed. © 2001 Plenum Publishing Corporation.

Identifier

0242310789 (Scopus)

Publication Title

International Journal of Thermophysics

External Full Text Location

https://doi.org/10.1023/A:1012869710173

ISSN

0195928X

First Page

1593

Last Page

1611

Issue

5

Volume

22

Fund Ref

U.S. Department of Defense

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