Silicon device processing in H-ambients: H-diffusion mechanisms and influence on electronic properties

Document Type

Article

Publication Date

1-1-2001

Abstract

Hydrogen is an electronically active impurity in Si with some unique properties-it can passivate other impurities and defects, both at the interface and in the bulk. Controlled introduction of H can lower interface state density, and thereby improve Schottky and MOS devices, and can reduce bulk recombination to increase minority-carrier-controlled device performance. However, excess H can also introduce defects that can be detrimental to the device properties. Although H is typically introduced by exposing the device to a flux of atomic species, a suitable device configuration can be passivated by thermal treatment in forming gas. This paper addresses some basic issues of device processing in H ambient to improve device performance.

Identifier

0035737204 (Scopus)

Publication Title

Journal of Electronic Materials

External Full Text Location

https://doi.org/10.1007/s11664-001-0181-1

ISSN

03615235

First Page

1616

Last Page

1627

Issue

12

Volume

30

Grant

DE-AC36-00G010337

Fund Ref

U.S. Department of Energy

This document is currently not available here.

Share

COinS