Transient-enhanced diffusion in shallow-junction formation
Document Type
Article
Publication Date
1-1-2002
Abstract
Shallow junctions are formed in crystalline Si by low-energy ion implantation of B+, P+, or As+ species accompanied by electrical activation of dopants by rapid thermal annealing and the special case of spike annealing. Diffusion depths were determined by secondary ion-mass spectroscopy (SIMS). Electrical activation was characterized by sheet resistance, Hall coefficient, and reverse-bias diode-leakage measurements. The B+ and P+ species exhibit transient-enhanced diffusion (TED) caused by transient excess populations of Si interstitials. The electrically activated fraction of implanted dopants depends mainly on the temperature for B+ species, while for P+ species, it depends on both temperature and P+ dose. The relatively small amount of diffusion associated with As+ implants is favorable for shallow-junction formation with spike annealing.
Identifier
0036809275 (Scopus)
Publication Title
Journal of Electronic Materials
External Full Text Location
https://doi.org/10.1007/s11664-002-0034-6
ISSN
03615235
First Page
999
Last Page
1003
Volume
31
Recommended Citation
Fiory, Anthony T.; Chawda, S. G.; Madishetty, S.; Mehta, V. R.; Ravindra, N. M.; McCoy, S. P.; Lefrançois, M. E.; Bourdelle, K. K.; McKinley, J. M.; Gossmann, H. J.L.; and Agarwal, A., "Transient-enhanced diffusion in shallow-junction formation" (2002). Faculty Publications. 14959.
https://digitalcommons.njit.edu/fac_pubs/14959
