Trapping and detrapping of H in Si: Impact on diffusion properties and solar cell processing

Document Type

Conference Proceeding

Publication Date

1-1-2002

Abstract

Influence of trapping and detrapping on the diffusion behavior of H in Si is investigated using both experiment and theory. Experimental H (or D) diffusion profiles, produced by plasma and ion implantation processes, are fitted with a theoretical model. This model includes three kinds of traps - stationary, process-induced, and mobile. Excellent correlation between theory and experiment is observed. Best-fit parameters provide an insight into the trapping mechanisms. We also show how some of the problems resulting from trapping can be circumvented by suitable process conditions.

Identifier

0036447879 (Scopus)

Publication Title

Materials Research Society Symposium Proceedings

External Full Text Location

https://doi.org/10.1557/proc-719-f5.3

ISSN

02729172

First Page

125

Last Page

131

Volume

719

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