Crystal fracture induced by decorating of postimplantation defects: Silicon layer delamination

Document Type

Conference Proceeding

Publication Date

1-1-2002

Abstract

We observe hydrogen platelets buildup into single crystalline silicon caused by hydrogen plasma processing. The platelets are aligned along a layer of lattice defects formed in silicon before the plasma processing. The buried defect layer is formed by either silicon-into-silicon or argon-into-silicon implantation. We discuss the platelet nucleation, growth, and merge phenomena, and discuss applicability of the plasma hydrogenation to silicon-on-insulator wafer process of layer transfer type.

Identifier

84961302130 (Scopus)

ISBN

[0780371550]

Publication Title

Proceedings of the International Conference on Ion Implantation Technology

External Full Text Location

https://doi.org/10.1109/IIT.2002.1258087

First Page

641

Last Page

644

Volume

22-27-September-2002

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