Transient enhanced diffusion of B in Si implanted with decaborane cluster ions

Document Type

Article

Publication Date

8-1-2002

Abstract

Cluster ions, obtained by ionization of decaborane (B10H14) vapor are considered for implantation of B into Si to form very shallow junctions required for the next generations of metal oxide semiconductor devices. While shallow B implantation can thus be achieved with relatively large implantation energies, the final junction depth is also defined by diffusion during annealing, particularly by transient enhanced diffusion (TED). TED of B in Si implanted with mass analyzed B10Hx+ cluster ions at energies of 2, 5, and 12 ke V is compared with TED from 1.2 keV B+ ions. No difference was found between TED of B implanted in Si with the cluster and the monomer ions of the equivalent energy and dose.

Identifier

0036687218 (Scopus)

Publication Title

Journal of the Electrochemical Society

External Full Text Location

https://doi.org/10.1149/1.1486453

ISSN

00134651

First Page

G474

Last Page

G476

Issue

8

Volume

149

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