Photovoltage in free-standing mesoporous silicon layers
Document Type
Conference Proceeding
Publication Date
5-1-2003
Abstract
Spectral and transient photovoltage (PV) phenomena are investigated in hydrogenated and oxidised free standing mesoporous silicon (meso-PS) layers. The size and the surface conditioning were changed systematically. The absorption tails of hydrogenated and oxidised meso-PS have been related to disorder in the bulk nanoparticle (similar to p+-Si) and to a disordered surface region. The limits of surface and diffusion PV are discussed. For as prepared meso-PS, a fast PV response has been observed. The fast component disappeared and the PV transients became more and more retarded in time with ongoing decrease of the mean dimensions of the Si nanoparticles. The retarded component in the PV transients has been assigned to interparticle transport in ondulated quantum wires and correlates with the dielectric relaxation time.
Identifier
0037701314 (Scopus)
Publication Title
Physica Status Solidi A Applied Research
External Full Text Location
https://doi.org/10.1002/pssa.200306477
ISSN
00318965
First Page
107
Last Page
112
Issue
1
Volume
197
Recommended Citation
Dittrich, Th and Duzhko, V., "Photovoltage in free-standing mesoporous silicon layers" (2003). Faculty Publications. 14133.
https://digitalcommons.njit.edu/fac_pubs/14133
