Passivation of interface-states in large-area Si devices using hydrogen implantation

Document Type

Letter to the Editor

Publication Date

7-1-2003

Abstract

We have found that in the large-scale transistor structures, where gate oxide thickness of 6 nm and below is used, the standard post-metallization (forming gas) annealing leaves a large number of Si/SiO2 interface states unpassivated, with a lower limit of Nit = 5e11 cm-2. This may be due to the limited range of hydrogen (H) diffusion through the thin gate oxide and its ensuing inability to reach beyond the edges of the devices with a channel length larger than 3.0 μm. In this study, we have shown that hydrogen ion implantation can successfully remove the residual interface state by placing the hydrogen uniformly throughout the area of a large device. Remarkable improvements in all the device characteristics, including capacitance and current versus voltage and the transistor threshold behavior as a function of the channel length, was achieved by hydrogen implantation andanneal as a final processing step.

Identifier

0041385860 (Scopus)

Publication Title

IEEE Electron Device Letters

External Full Text Location

https://doi.org/10.1109/LED.2003.814993

ISSN

07413106

First Page

448

Last Page

450

Issue

7

Volume

24

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