In-situ depth monitoring of the deep reactive ion etch process

Document Type

Conference Proceeding

Publication Date

9-1-2003

Abstract

A laser-based technique which was used to monitor the time multiplexed deep reactive ion etching of silicon was described. A Sofie Digilem camera laser interferometer was used for etch depth monitoring. The laser source was integrated with a signal detector and a charge coupled device camera that provided video images of the wafer surface. Mask and substrate etch rates and mask quality information could be extracted simultaneously and in-situ using a single laser beam system.

Identifier

0042440769 (Scopus)

Publication Title

Biennial University Government Industry Microelectronics Symposium Proceedings

ISSN

07496877

First Page

381

Last Page

383

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