Characteristics of thermally evaporated HfO 2

Authors

R. Garg, Newark College of Engineering
N. A. Chowdhury, Newark College of Engineering
R. K. Jarwal, Newark College of Engineering
D. Misra, Newark College of Engineering
P. K. Swain, Sarnoff Corporation
M. Bhaskaran, Sarnoff Corporation

Document Type

Conference Proceeding

Publication Date

12-1-2003

Abstract

Electrical characteristics of thermally evaporated of HfO 2 were studied for the first time. The dielectric constant was found to be in the range of 18 to 25. MOS capacitors using these HfO 2 films as dielectric were annealed at various temperatures. It is observed that HfO 2 films annealed at 450°C show a low leakage current density of <10 ^-7amp/cm ² at IV. Significant reduction in oxide charges to 1.61 × 10 ¹¹/cm ² was observed from capacitance voltage measurements. Low temperature charge trapping characteristics shows neutral shallow traps in HfO 2. Observed characteristics indicate that HfO 2 films deposited by standard thermal evaporation are suitable for metal-oxide-semiconductor device applications.

Identifier

3042774353 (Scopus)

Publication Title

Proceedings Electrochemical Society

First Page

385

Last Page

395

Volume

22

Recommended Citation

Garg, R.; Chowdhury, N. A.; Jarwal, R. K.; Misra, D.; Swain, P. K.; and Bhaskaran, M., "Characteristics of thermally evaporated HfO 2" (2003). Faculty Publications. 13877.
https://digitalcommons.njit.edu/fac_pubs/13877