Process for extremely thin silicon-on-insulator wafer

Document Type

Conference Proceeding

Publication Date

12-1-2003

Abstract

We observe hydrogen platelets buildup into single crystalline silicon caused by hydrogen plasma processing. The platelets are aligned along a layer of lattice defects formed in silicon before the plasma processing. The buried defect layer is formed by either silicon-into-silicon or argon-into-silicon implantation. We discuss the platelet nucleation, growth, and merge phenomena, and discuss applicability of the plasma hydrogenation to silicon-on-insulator wafer process of layer transfer type.

Identifier

6444232346 (Scopus)

ISBN

[0972842209]

Publication Title

2003 Nanotechnology Conference and Trade Show Nanotech 2003

First Page

546

Last Page

549

Volume

1

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