Impact of the gate-electrode/dielectric interface on the low-frequency noise of thin gate oxide n-channel metal-oxide-semiconductor field-effect transistors

Document Type

Article

Publication Date

1-1-2007

Abstract

The low-frequency (LF) noise of n-MOSFETs with a 1.5 nm SiON gate oxide is studied for different gate materials, namely, a polycrystalline (poly) silicon gate, a fully nickelsilicided (FUSI) gate and a NiSi FUSI gate deposited on 10 cycles of HfO2. The principal aim is to identify the most likely origin of the predominant 1/f noise in the thin gate oxide devices by investigating the impact of the gate electrode processing. It is reported that the lowest input-referred voltage noise spectral density (SVG) in linear operation for a gate voltage at the threshold voltage is found for the FUSI transistor, while adding 10 cycles of HfO2 enhances markedly the noise magnitude. The 1/f noise characteristic behaves according to the number fluctuations theory so that the results are interpreted in terms of trapping and de-trapping of channel carriers by defects in the gate dielectric layer. Therefore, the marked effect of the gate material is at present ascribed to the different trap density in the vicinity of the gate-SiON interface, which is derived from the LF noise spectra. © 2007 Elsevier Ltd. All rights reserved.

Identifier

34147168032 (Scopus)

Publication Title

Solid State Electronics

External Full Text Location

https://doi.org/10.1016/j.sse.2007.02.011

ISSN

00381101

First Page

627

Last Page

632

Issue

4 SPEC. ISS.

Volume

51

Grant

ECS-0140584

Fund Ref

National Science Foundation

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