Trapping in deep defects under substrate hot electron stress in TiN/Hf-silicate based gate stacks

Document Type

Article

Publication Date

1-1-2007

Abstract

Substrate hot electron stress was applied on n+-ringed n-channel MOS capacitors with TiN/Hf-silicate based gate stacks to study the role of O vacancy induced deep bulk defects in trapping and transport. For the incident carrier energies above the calculated O vacancy formation threshold, applied on MOS devices with the thick high-κ layer, both the flatband voltage shift due to electron trapping at the deep levels and the increase in leakage current during stress follow tn (n ≈ 0.4) power law dependence. Negative-U transitions to the deep levels are shown to be possibly responsible for the strong correlation observed between the slow transient trapping and the trap-assisted tunneling. © 2006 Elsevier Ltd. All rights reserved.

Identifier

33846615780 (Scopus)

Publication Title

Solid State Electronics

External Full Text Location

https://doi.org/10.1016/j.sse.2006.10.010

ISSN

00381101

First Page

102

Last Page

110

Issue

1

Volume

51

Grant

-0140584

Fund Ref

National Science Foundation

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