Intrafacet migration effects in InGaN/GaN structures grown on triangular GaN ridges studied by submicron beam x-ray diffraction

Document Type

Article

Publication Date

4-3-2008

Abstract

Synchrotron radiation has been utilized for x-ray diffraction and reciprocal space mapping of InGaNGaN multiple-quantum-well (MQW) structures grown on the sidewalls of 10-μm -wide triangular GaN ridges with {1-1.1} facets. Samples were produced by lateral overgrowth through a patterned dielectric mask by using metal-organic vapor-phase epitaxy. Global MQW strain, period, and the tilt of the (00.1) crystallographic planes have been measured across the sidewall facets using a 240 nm x-ray beam. Results of this study are interpreted in terms of suppressed intrafacet migration of In and Ga precursors during the MQW growth. © 2008 American Institute of Physics.

Identifier

41349099159 (Scopus)

Publication Title

Applied Physics Letters

External Full Text Location

https://doi.org/10.1063/1.2901142

ISSN

00036951

Issue

12

Volume

92

Fund Ref

National Science Foundation

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