GaN thin films on z- and x-cut LiNbO3 substrates by MOVPE

Authors

A. Ougazzaden, GT-CNRS UMI 2958
T. Moudakir, Laboratoire Matériaux Optiques, Photonique et Systèmes
T. Aggerstam, The Royal Institute of Technology (KTH)
G. Orsal, Laboratoire Matériaux Optiques, Photonique et Systèmes
J. P. Salvestrini, Laboratoire Matériaux Optiques, Photonique et Systèmes
S. Gautierand, Laboratoire Matériaux Optiques, Photonique et Systèmes
A. A. Sirenko, New Jersey Institute of Technology

Document Type

Conference Proceeding

Publication Date

12-1-2008

Abstract

We report epitaxial growth of GaN layers on z- and x-cut LiNbO3 substrates using MOVPE. GaN layers with the thickness of 450 nm were characterized using X-ray diffraction. For both, z- and x-cut orientations of LiNbO3 substrates, the GaN layers have c-axis orientation normal to the substrate plane and the in-plane lattice orientation of GaN layers coincides with the primary axes of LiNbO3 substrates. Although GaN layers exhibit almost complete strain relaxation, the residual compressive strain determined with respect to a freestanding GaN is of the order of +0.37% and +0.2% for z- and x-cut substrates, respectively. © 2008 Wiley-VCH Verlag GmbH & Co. KGaA.

Identifier

50849143992 (Scopus)

Publication Title

Physica Status Solidi C Current Topics in Solid State Physics

External Full Text Location

https://doi.org/10.1002/pssc.200778490

e-ISSN

16101642

ISSN

18626351

First Page

1565

Last Page

1567

Issue

6

Volume

5

Recommended Citation

Ougazzaden, A.; Moudakir, T.; Aggerstam, T.; Orsal, G.; Salvestrini, J. P.; Gautierand, S.; and Sirenko, A. A., "GaN thin films on z- and x-cut LiNbO3 substrates by MOVPE" (2008). Faculty Publications. 12573.
https://digitalcommons.njit.edu/fac_pubs/12573