Silicon-germanium nanostructures for on-chip optical interconnects

Document Type

Article

Publication Date

6-1-2009

Abstract

Silicon-germanium epitaxially grown on silicon in the form of two-dimensional (quantum wells) and three-dimensional (quantum dots) nanostructures exhibits photoluminescence and electroluminescence in the technologically important spectral range of 1.3-1.6 μm. Until recently, the major roadblocks for practical applications of these devices were strong thermal quenching of the luminescence quantum efficiency, and a long carrier radiative lifetime. This paper summarizes recent progress in the understanding of carrier recombination in Si/SiGe nanostructures and presents a potential new route toward CMOS compatible light emitters for on-chip optical interconnects. © 2009 Springer-Verlag.

Identifier

67649124273 (Scopus)

Publication Title

Applied Physics A Materials Science and Processing

External Full Text Location

https://doi.org/10.1007/s00339-009-5111-8

e-ISSN

14320630

ISSN

09478396

First Page

1015

Last Page

1027

Issue

4

Volume

95

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