High k dielectrics on high-mobility substrates: The interface!

Document Type

Article

Publication Date

1-1-2011

Abstract

The interface defect response at the high k and high-mobility substrate interface has been discussed in this short review. The impact of interface passivation techniques to optimize device performance was outlined. From the electrical performance, the interface characteristics seem to depend on the deposition process, combination of deposition parameters, the substrate surface orientation, pre-deposition surface treatments, and subsequent annealing temperatures. Some recent developments of the high k/Ge interface and high k/III-V interface and their characterization were discussed.

Identifier

84856833961 (Scopus)

Publication Title

Electrochemical Society Interface

External Full Text Location

https://doi.org/10.1149/2.F05114if

e-ISSN

19448783

ISSN

10648208

First Page

47

Last Page

51

Issue

4

Volume

20

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