Effect of gas ambient on the synthesis of Al and N co-doped ZnO:(Al,N) films and their influence on PEC response for photoelectrochemical water splitting application
Document Type
Conference Proceeding
Publication Date
1-1-2011
Abstract
Al and N co-doped ZnO thin films, ZnO:(Al,N), are synthesized by radio-frequency magnetron sputtering in mixed Ar and N2 and mixed O2 and N2 gas ambient at 100°C. The ZnO:(Al,N) films deposited in mixed Ar and N2 gas ambient did not incorporate N, whereas ZnO:(Al,N) films deposited in mixed O2 and N2 gas ambient showed enhanced N incorporation and crystallinity as compared to ZnO :N thin films deposited in the same gas ambient. As a result, ZnO:(Al,N) films deposited in mixed O2 and N2 gas ambient showed higher photocurrents than the ZnO:(Al,N) thin films deposited in mixed Ar and N 2 gas ambient. Our results indicate that the gas ambient plays an important role in N incorporation and crystallinity control in Al and N co-doped ZnO thin films.
Identifier
79960575382 (Scopus)
ISBN
[9781118029459]
Publication Title
TMS Annual Meeting
External Full Text Location
https://doi.org/10.1002/9781118062111.ch14
First Page
135
Last Page
142
Volume
1
Recommended Citation
Shet, Sudhakar; Chen, Le; Tang, Houwen; Deutsch, Todd; Wang, Heli; Ravindra, Nuggehalli; Yan, Fa; Turner, John; and Al-Jassim, Mowafak, "Effect of gas ambient on the synthesis of Al and N co-doped ZnO:(Al,N) films and their influence on PEC response for photoelectrochemical water splitting application" (2011). Faculty Publications. 11538.
https://digitalcommons.njit.edu/fac_pubs/11538
