Time-resolved x-ray excited optical luminescence in InGaN/GaN multiple quantum well structures

Document Type

Article

Publication Date

6-15-2011

Abstract

Synchrotron-based x-ray radiation has been utilized to measure time-resolved x-ray excited optical luminescence (TR-XEOL) from InGaN/GaN multiple quantum well (MQW) structures. Excess carrier recombination lifetimes were determined for MQWs grown on conventional c-plane as well as on non-polar m-plane substrates. In addition, the simultaneous measurement of XEOL and x-ray fluorescence reveals an interaction between inner-core excitations of Si impurities and bound exciton recombination in doped GaN-based device structures. Furthermore, the TR-XEOL characterization technique were also applied to InGaN/GaN MQWs grown on GaN inverted pyramid structures. © 2011 American Institute of Physics.

Identifier

79960162937 (Scopus)

Publication Title

Journal of Applied Physics

External Full Text Location

https://doi.org/10.1063/1.3598137

ISSN

00218979

Issue

12

Volume

109

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