Investigation of the Temperature Impact on the Performance Characteristics of the Field-Plated Recessed Gate III-Nitride HEMT on β-Ga2 O3 Substrate

Document Type

Conference Proceeding

Publication Date

1-1-2024

Abstract

In this chapter, a field-plated recessed gate III-nitride High Electron Mobility Transistor (HEMT) grown on β-Ga2O3 substrate is designed. The electrical characteristics of the proposed HEMT is investigated by using the thermal models of ATLAS TCAD simulations. The impact of temperature on the transport properties is studied. Influence of the substrate thickness with temperature changes on drain characteristics are also discussed. A field-plate and gate length of 20 nm each with 30 nm recessed depth is considered for the analysis. Self-heating effect in drain current characteristics are investigated with temperature changes. The maximum drain saturation current observed with 180 nm (230 nm) substrate thickness are 1.1 (1.06) A/mm, 0.708 (0.705) A/mm and 0.502 (0.499) A/mm for 300 K, 550 K and 800 K, respectively. The influence of substrate layer thickness on drain current is less apparent at a higher temperature. The findings demonstrated that scattering processes that emerge when temperature increases above a particular amount cause both the mobility and the carrier concentration of 2DEG to decrease. Furthermore, A kink effect is seen in the drain current–voltage characteristics for gate voltage VGS = − 2 V.

Identifier

85180553528 (Scopus)

ISBN

[9789819944941]

Publication Title

Lecture Notes in Electrical Engineering

External Full Text Location

https://doi.org/10.1007/978-981-99-4495-8_8

e-ISSN

18761119

ISSN

18761100

First Page

111

Last Page

121

Volume

1067

Grant

MTR/2021/000370

Fund Ref

Department of Science and Technology, Ministry of Science and Technology, India

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