Self-assembled silicon-germanium nanostructures for CMOS compatible light emitters

Document Type

Article

Publication Date

9-1-2011

Abstract

To be commercially valuable, light emitters based on SiGe nanostructures should be efficient, fast, operational at room temperature, and be compatible with the CMOS technology. Also, the emission wavelength should match the optical waveguide low-loss spectral region of 1.3-1.6 μm. Among other approaches, epitaxially-grown Si/SiGe quantum dot/quantum well complexes produce efficient photoluminescence and electroluminescence in the required spectral range. Until recently, the major roadblocks for practical applications of these devices were strong thermal quenching of the luminescence quantum efficiency and a long carrier radiative lifetime. The latest progress in the understanding of physics of carrier recombination in Si/SiGe nanostructures is reviewed, and a new route toward CMOS compatible light emitters for on-chip optical interconnects is proposed. © 2011 Her Majesty the Queen in Right of Canada.

Identifier

80052325941 (Scopus)

Publication Title

Physica Status Solidi C Current Topics in Solid State Physics

External Full Text Location

https://doi.org/10.1002/pssc.201084032

e-ISSN

16101642

ISSN

18626351

First Page

2870

Last Page

2874

Issue

9

Volume

8

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