Room-temperature silicon band-edge photoluminescence enhanced by spin-coated sol-gel films

Document Type

Article

Publication Date

11-1-2011

Abstract

Photoluminescence is observed at room temperature from phonon-assisted band-to-band emission in Si (1.067 eV peak) using unpatterned bulk p-type silicon wafer samples that were spin-coated with Er-doped (6 at.%) silica-gel films (0.13 μm) and vacuum annealed; the strongest emission was obtained at ∼700 °C. Comparative study of annealing behavior indicates an efficiency enhancement of two orders of magnitude. Emission from Er3+ ions in the silica film is used to gauge relative emission strengths. Mechanisms for inducing emission from silicon utilizing stresses in sol-gel films are discussed. © 2011 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.

Identifier

80052788036 (Scopus)

Publication Title

Scripta Materialia

External Full Text Location

https://doi.org/10.1016/j.scriptamat.2011.07.025

ISSN

13596462

First Page

767

Last Page

770

Issue

9

Volume

65

Fund Ref

National Renewable Energy Laboratory

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