Reversible degradation of photoluminescence in Si/SiGe three dimensional nanostructures

Document Type

Conference Proceeding

Publication Date

12-1-2011

Abstract

We report the degradation of low temperature photoluminescence (PL) from Si/SiGe three-dimensional cluster morphology nanostructures under continuous photoexcitation. The PL intensity initially decreases slowly for about 15 minutes, and then decreases rapidly, until only ∼ 10% of the original PL intensity remains. A complete recovery of the PL requires restoring the sample temperature to - 300K. We propose that a slow accumulation of charge in SiGe clusters enhances the rate of Auger recombination and results in the observed PL degradation. © 2012 Materials Research Society.

Identifier

84879481132 (Scopus)

ISBN

[9781627482233]

Publication Title

Materials Research Society Symposium Proceedings

External Full Text Location

https://doi.org/10.1557/opl.2012.730

ISSN

02729172

First Page

43

Last Page

48

Volume

1409

Fund Ref

National Science Foundation

This document is currently not available here.

Share

COinS