Field-effect transistors with graphene channels and quantum dots: Gate control and photo-induced effects

Document Type

Conference Proceeding

Publication Date

12-1-2011

Abstract

Field effect transistors with channels made of graphene layer(s) are explored. The graphene layer(s) are brought into contact with semiconductor quantum dots and the effects of pump light on its electrical characteristics are assessed. Negative differential resistance (NDR) is observed as a function of gate voltage and as a function of pump light illumination. The dots' photoluminescence (PL) has increased abruptly to twice its value as a function of source-drain voltage. © 2011 IEEE.

Identifier

84858986584 (Scopus)

ISBN

[9781457715143]

Publication Title

Proceedings of the IEEE Conference on Nanotechnology

External Full Text Location

https://doi.org/10.1109/NANO.2011.6144614

e-ISSN

19449380

ISSN

19449399

First Page

1584

Last Page

1587

This document is currently not available here.

Share

COinS