Interfacial layer growth condition dependent electrical conduction in HfO2/SiO2 heterostructured thin films

Document Type

Conference Proceeding

Publication Date

12-1-2011

Abstract

The electrical conduction mechanism contributing to the leakage current at different field regions has been studied in this work. The current-voltage (I-V) measurement of TiN/HfO2/SiO2/P-Si nMOS capacitor has been taken for two different interfacial layer (SiO2) growth conditions such as in situ steam grown (ISSG) and chemical processes. It is observed that Poole-Frenkel mechanism is the dominant conduction mechanism in high field region whereas Ohmic conduction is dominant in the low field region. Also it is seen that the gate leakage current is reduced for the devices having chemically grown interfacial layer compared to that of ISSG devices. Both trap energy level (φt) and activation energy (Ea) increase in the chemically grown interfacial layer devices for the Poole-Frenkel and Ohmic conduction mechanisms respectively in comparison to ISSG devices. Trap energy level (φt) of ∼ 0.2 eV, obtained from Poole-Frenkel mechanism indicates that the doubly ionized oxygen vacancies (V2-) are the active defects and are contributing to the leakage current in these devices. © 2012 Materials Research Society.

Identifier

84879216773 (Scopus)

ISBN

[9781627482158]

Publication Title

Materials Research Society Symposium Proceedings

External Full Text Location

https://doi.org/10.1557/opl.2012.506

ISSN

02729172

First Page

44

Last Page

50

Volume

1397

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