Effect of post plasma oxidation on Ge gate stacks interface formation

Document Type

Conference Proceeding

Publication Date

1-1-2016

Abstract

This work investigates the application of slot plane antenna plasma oxidation (SPAO) during dielectric deposition to process TiN/ZrO2/Al2O3/Ge MOS capacitors. The impact of SPAO exposure on effective oxide thickness (EOT), leakage current, interface state density (Dit), C-V hysteresis, oxide breakdown characteristics was studied. Considerable degradation of electrical properties was observed with SPAO being performed before Al2O3/ZrO2 gate stack deposition. When SPAO was performed in between Al2O3/ZrO2 deposition, moderate increase in EOT and significant decrease in Dit was observed. This can be attributed to the formation of a thicker GeOX layer. On the other hand, when SPAO was performed after the deposition of both the high-k layers, higher Dit was observed suggesting a GeO2 layer formation. Time zero dielectric breakdown (TZDB) characteristics indicate that plasma exposure after and in between Al2O3/ZrO2 deposition enhances the dielectric quality by film densification due to plasma exposure. It was also demonstrated that improved dielectric and interface quality can be achieved when ALD-Al2O3/ZrO2 gate stacks were exposed to SPAO.

Identifier

85010670361 (Scopus)

ISBN

[9781607687146]

Publication Title

Ecs Transactions

External Full Text Location

https://doi.org/10.1149/07204.0303ecst

e-ISSN

19385862

ISSN

19386737

First Page

303

Last Page

312

Issue

4

Volume

72

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