High-Κ dielectrics and device reliability

Document Type

Syllabus

Publication Date

1-1-2016

Abstract

Technology scaling continues to be driven by the cost per function due to proliferation of mobile computing. With sub-45-nm technology node, high-Κ gate dielectrics such as HfO2 have emerged. This chapter is dedicated to high-Κ dielectrics with particular emphasis to most important characteristics the reliability.

Identifier

85014259817 (Scopus)

ISBN

[9781849199971, 9781849199988]

Publication Title

Nano Cmos and Post Cmos Electronics Devices and Modelling

External Full Text Location

https://doi.org/10.1049/PBCS029E_ch1

First Page

1

Last Page

33

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