P-Silicon based microbolometer

Document Type

Conference Proceeding

Publication Date

1-1-2016

Abstract

In this study, the use of p-Type low doped silicon as a thermosensing element for application in the fabrication of uncooled infrared microbolometers has been investigated. A simulation of the radiative properties of a multilayer structure, in the infrared spectral range of 2.5-14 microns, utilizing Multi-Rad-software based on a matrix method of representing the optical properties, at room temperature, is presented. The results are in accord with the available experimental data in the literature. Black gold (bAu) has been considered as an IR absorber layer and low doped psilicon as a thermosensing layer. The simulated results of the radiative properties and numerical calculations show that p-silicon is an excellent candidate for thermosensing applications due to its compatible optical and electrical characteristics.

Identifier

85017158577 (Scopus)

ISBN

[9781510833142]

Publication Title

Materials Science and Technology Conference and Exhibition 2016 MS and T 2016

First Page

1121

Last Page

1132

Volume

2

This document is currently not available here.

Share

COinS